Volume 2, Issue 1, March 2017, Page: 43-46
Radiation Effect on Layered Crystals of GaS and GaS <Yb>
R. S. Madatov, Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan; Azerbaijan National Aviation Academy of Azerbaijan, Baku, Azerbaijan
N. N. Gadzhieva, Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
A. I. Nadjafov, Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
N. I. Huseynov, Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
F. G. Asadov, Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
A. A. Abdurrahimov, Physics Faculty of Azerbaijan Technical University, Baku, Azerbaijan
D. J. Askerov, Physics Faculty of Azerbaijan State University of Oil and Industry, Baku, Azerbaijan
Received: Dec. 29, 2016;       Accepted: Jan. 13, 2017;       Published: Feb. 13, 2017
DOI: 10.11648/j.css.20170201.16      View  1734      Downloads  75
It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.
IR-Absorption, Radiation, Semiconductor, Defects, Annealing
To cite this article
R. S. Madatov, N. N. Gadzhieva, A. I. Nadjafov, N. I. Huseynov, F. G. Asadov, A. A. Abdurrahimov, D. J. Askerov, Radiation Effect on Layered Crystals of GaS and GaS <Yb>, Colloid and Surface Science. Vol. 2, No. 1, 2017, pp. 43-46. doi: 10.11648/j.css.20170201.16
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A. Z. Abasova, R. S. Madatov, V. I. Stafeyev. Radiation-stimulated processes in chalcogenide structures. “Baku. Elm, 2010” p. 352.
R. S. Madatov, T. B. Taghiyev, A. I. Najafov, I. F. Gabulov, Sh. P. Shekili. Semicond. Phys. Quantum Electronics Optoelectronics., 9, №2, с. 8-11, (2006).
R. S. Madatov, A. I. Najafov, T. B. Taghiyev, Sh. P. Shekili. Inorganic materials, 44, №4, p. 396-399. (2008).
А. Garibov, R. Madatov, Y. Mustafaev, F. Ahmedov, M. Jahangirov, Journal of Electronic Materials.
V. V. Sobolev. Zones and excitons of chalcogenide gallium, indium and thallium. Kishinev, Shitinicha, p. 272, (1982).
V. E. Lashkarev, A. B. Lyubchenko, M. K. Sheynkman. Non-equilibrium processes in semiconductors. “Kiev. Naukovo Dumka”, p. 264 (1981).
G. L. Belenkiy, E. Y. Salayev, R. A. Suleymanov. Physics-Uspekhi, 155, edit 1, p. 89-100 (1988).
A. K. Pikayev. Dosimetry in radiation chemistry. М. Nauka, 1975, p. 311.
Raman scattering in GaSe / Raymond M. Hoff // A dissertation submitted in partial fulfilment of the requiremets for the degree of doctor of philosophy, Simon Fraser iniversity, 1975.
A. Baydullayeva, Z. K. Vlasenko, B. K. Dauletmuratov, L. F. Kuzan, P. E. Mozol, FTP, edit 4, v. 39, 2005.
A. G. Kazimzadeh, A. A. Aghayeva, V. V. Salmanov, A. G. Mohtari, Optic radiation detectors based on layered semiconductors. JTP, 77, edit 12, p. 80-85. (2007).
Z. D. Kovalyuk, P. G. Litovchenko, O. A. Politanskaya, O. N. Sidor, etc. FTP, v. 41, edit 5, p. 570-576. (2007).
Kh. Rissel, I. Ruge. Ion implantation. “М. Nauka, 1983E p. 360.
N. M. Gasanly, A. Aydõnlõ, H. OÈ zkan, C. Kocabas. Sol. St. Communicat., 116, pp. 147-151, (2000).
K. Allakhverdiev, T. Baykara, S. Ellialtiog˘lu, F. Hashimzade, D. Huseyinova. Materials Research Bulletin, 41, Issue 4, pp. 751–763. (2006).
A. A. Garibov, R. S. Madatov, F. F. Komarov, V. V. Pilko, Y. M. Mustafayev, F. I. Ahmadov, M. M. Jahangirov, FTP. v. 49, edit 5, 599-604 (2015).
V. Bodnar, G. F. Smirnova, A. G. Koroza, A. P. Chernyakova. Phys. St. Sol. (b), 158, 469 (1990).
F. F. Komarov. Ion and photon processing of materials, “Minsk Bel. stat. University”, p. 209 (1998).
N. I. Huseynov, N. N. Hajiyeva, F. G. Asadov, Journal of Radiation Research, p. 11-15. vol. 2, 2015, Baku.
N. I. Huseynov, F. G. Asadov Study of detention centers in GaS layered semiconductor crystals. ANAS-70, 02-04 November 2015, p. 66-67.
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